Description

This device is a complementary N-channel and Pchannel Power MOSFET developed using

STripFET™ V (P-channel) and STripFET™ VI

DeepGATE™ (N-channel) technologies. The

resulting device exhibits low on-state resistance

and an FOM among the lowest in its voltage

class.

Features

• RDS(on) * Qg industry benchmark

• Extremely low on-resistance RDS(on)

• High avalanche ruggedness

• Low gate drive power losses

Applications

• Switching applications