DESCRIPTION

This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT™ package allow a significant reduction in board space without compramising performance.

■ TYPICAL RDS(on) = 0.024Ω

■ IMPROVED DIE-TO-FOOTPRINT RATIO

■ VERY LOW PROFILE PACKAGE

APPLICATIONS

■ DC-DC CONVERTERS

■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT