Features

• AEC-Q101 qualified

• MSL1 grade

• 175 °C maximum operating junction temperature

• 100% avalanche tested

• Low gate charge Qg

• Wettable flank package

Applications

• Automotive motor control

• Electro mobility

Description

The STL165N10F8AG is a 100 V N-channel enhancement mode Power MOSFET

designed in STripFET F8 technology featuring an enhanced trench gate structure.

It ensures a state-of-the-art of figure of merit for very low on-state resistance while

reducing internal capacitances and gate charge for faster and more efficient

switching.