Features

• 100 avalanche tested

• Intrinsic capacitances and Qg minimized

• High speed switching

• Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)

Applications

• Switching applications

Description

These Power MOSFETs are designed using the STMicroelectronics consolidated

strip-layout-based MESH OVERLAY process. The result is a product that matches or

improves on the performance of comparable standard parts from other

manufacturers.