Features

 High speed switching

 Tight parameter distribution

 Safe paralleling

 Low thermal resistance

 Short-circuit rated

Applications

 Motor control

 UPS

 PFC

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the H series of

IGBTs, which represents an optimum

compromise between conduction and switching

losses to maximize the efficiency of high

switching frequency converters. Furthermore, a

slightly positive VCE(sat) temperature coefficient

and very tight parameter distribution result in

safer paralleling operation.