Features

• Designed for soft commutation only

• Maximum junction temperature: TJ = 175 °C

• VCE(sat) = 1.5 V (typ.) @ IC = 40 A

• Minimized tail current

• Tight parameter distribution

• Low thermal resistance

• Low drop voltage freewheeling co-packaged diode

• Positive VCE(sat) temperature coefficient

Applications

• Induction heating

• Resonant converters

• Microwave ovens

Description

The newest IGBT 650 V soft-switching IH series has been developed using an

advanced proprietary trench gate field-stop structure, whose performance is

optimized both in conduction and switching losses for soft commutation. A

freewheeling diode with a low drop forward voltage is included. The result is a

product specifically designed to maximize efficiency for any resonant and softswitching

applications.