Features

• Maximum junction temperature: TJ = 175 °C

• Excellent switching performance thanks to the extra driving kelvin pin

• Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A

• Minimized tail current

• Tight parameter distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• High-frequency converters

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the new HB series of IGBTs, which represents an

optimum compromise between conduction and switching loss to maximize the

efficiency of any frequency converter. A faster switching event can be achieved by

the Kelvin pin, which separates power path from driving signal. Furthermore, the

slightly positive VCE(sat) temperature coefficient and very tight parameter distribution

result in safer paralleling operation.