Description

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.

Features

■ Low CRES/ CIES ratio (no cross conduction susceptibility)

■ IGBT co-packaged with ultra fast free-wheeling diode

Applications

■ High frequency inverters, UPS

■ Motor drivers

■ HF, SMPS and PFC in both hard switch and resonant topologies

■ Welding

■ Induction heating