Description

These devices are IGBTs developed using an

advanced proprietary trench gate field-stop

structure. These devices are part of the H series

of IGBTs, which represents an optimum

compromise between conduction and switching

losses to maximize the efficiency of high

switching frequency converters. Furthermore, a

slightly positive VCE(sat) temperature coefficient

and very tight parameter distribution result in

safer paralleling operation.

Features

 Maximum junction temperature: TJ = 175 °C

 High speed switching series

 Minimized tail current

 VCE(sat) = 2.1 V (typ.) @ IC = 40 A

 5 μs minimum short circuit withstand time at

TJ=150 °C

 Safe paralleling

 Very fast recovery antiparallel diode

 Low thermal resistance

Applications

 Uninterruptible power supply

 Welding machines

 Photovoltaic inverters

 Power factor correction

 High frequency converters