Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the S series of

1200 V IGBTs which is tailored to maximize

efficiency of low frequency industrial systems.

Furthermore, a positive VCE(sat) temperature

coefficient and tight parameter distribution result

in safer paralleling operation.

Features

• 10 µs of short-circuit withstand time

• VCE(sat) = 1.55 V (typ.) @ IC = 15 A

• Tight parameter distribution

• Safer paralleling

• Low thermal resistance

• Soft and fast recovery antiparallel diode

Applications

• Industrial drives

• UPS

• Solar

• Welding