Description

These devices are IGBTs developed using an

advanced proprietary trench gate and field-stop

structure. The devices are part of the H series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of high switching

frequency converters. Moreover, a slightly

positive VCE(sat) temperature coefficient and very

tight parameter distribution result in safer

paralleling operation.

Features

• High speed switching

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Short-circuit rated

• Ultrafast soft recovery antiparallel diode

Applications

• Motor control

• UPS, PFC