Description

These devices are IGBTs developed using an

advanced proprietary trench gate and field stop

structure. The device is part of the new HB series

of IGBTs, which represent an optimum

compromise between conduction and switching

losses to maximize the efficiency of any

frequency converter. Furthermore, a slightly

positive VCE(sat) temperature coefficient and very

tight parameter distribution result in safer

paralleling operation.

Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• VCE(sat) = 1.55 V (typ.) @ IC = 30 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• High frequency converters