Description

These devices are very fast IGBTs developed

using advanced PowerMESH™ technology. This

process guarantees an excellent trade-off

between switching performance and low on-state

behavior. These devices are well-suited for

resonant or soft-switching applications.

Features

 Lower on voltage drop (VCE(sat))

 Lower CRES / CIES ratio (no cross-conduction

susceptibility)

 Very soft ultra fast recovery antiparallel

diode

 Short-circuit withstand time 10 μs

Applications

 High frequency motor controls

 SMPS and PFC in both hard switch and

resonant topologies

 Motor drives