Features

• Maximum junction temperature: TJ = 175 °C

• Low VCE(sat) = 1.6 V (typ.) @ IC = 4 A

• Tight parameter distribution

• Low thermal resistance

• Short-circuit rated

• Soft and fast recovery antiparallel diode

Applications

• Industrial motor control

• Dishwashers

• Refrigerators and freezers

• Fans

Description

This device is an IGBT developed using an advanced proprietary trench gate

field-stop structure. This device is part of the H series of IGBTs, which represent

an optimum compromise between conduction and switching losses to maximize

the efficiency of high switching frequency converters. Moreover, a slightly positive

VCE(sat) temperature coefficient and very tight parameter distribution result in safer

paralleling operation.