Features

• 10 μs of short-circuit withstand time

• Low VCE(sat) = 1.85 V (typ.) @ IC = 35 A

• Positive VCE(sat) temperature coefficient

• Tight parameter distribution

• Maximum junction temperature: TJ = 175 °C

Applications

• Motor control

• Industrial drives

• PFC

• UPS

• Solar

• General purpose inverter

Description

This device is an IGBT developed using an advanced proprietary trench gate fieldstop

structure. The device is part of the M series IGBTs, which represent an optimal

balance between inverter system performance and efficiency where low-loss and

short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature

coefficient and tight parameter distribution result in safer paralleling operation.