Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 EP enhanced performance technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics with very low turn-off switching losses, rendering them suitable for the most demanding very high frequency converters.

Features

• Extremely low gate charge

• Excellent output capacitance (COSS) profile

• Very low turn-off switching losses

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications

• Tailored for very high frequency converters

(f > 150 kHz)