Features

 Extremely low gate charge

 Lower RDS(on) x area vs previous generation

 Low gate input resistance

 100 avalanche tested

 Zener-protected

Description

This device is an N-channel Power MOSFET

developed using MDmesh™ M2 technology.

Thanks to its strip layout and an improved vertical

structure, the device exhibits low on-resistance

and optimized switching characteristics,

rendering it suitable for the most demanding high

efficiency converters.

Applications

 Switching applications