Description

This device is a high voltage fast-switching NPN

power transistor, manufactured using high voltage

multi-epitaxial planar technology for high

switching speeds.

It employs a cellular emitter structure with planar

edge termination to enhance switching speeds,

while maintaining a wide RBSOA.

Features

■ High voltage capability

■ Very high switching speed

Applications

■ Electronic ballasts for fluorescent lighting

■ Battery charger