Description

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.

Features

• Extremely low gate charge

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100 avalanche tested

• Zener-protected

Applications

• Switching applications

• LLC converters, resonant converters