Description

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Features

■ Worldwide best RDS(on)* area

■ Higher VDSS rating

■ Excellent switching performance

■ Easy to drive

■ 100 avalanche tested

■ High dv/dt capability

Applications

■ Switching applications