Description

This FDmesh™ II Power MOSFET with fastrecovery body diode is produced using MDmesh™ II technology. Utilizing a new striplayout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.

Features

• Designed for automotive applications and AEC-Q101 qualified

• Fast-recovery body diode

• Low gate charge and input capacitance

• Low on-resistance

• 100 avalanche tested

• High dv/dt ruggedness

Applications

• Switching applications