Features

 Designed for automotive applications and

AEC-Q101 qualified

 Very low on-resistance

 Very low gate charge

 High avalanche ruggedness

 Low gate drive power loss

 Logic level

Applications

 Switching applications

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ H6 technology

with a new trench gate structure. The resulting

Power MOSFET exhibits very low RDS(on) in all

packages.