TYPICAL RDS(on) = 0.038 Ω

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This MOSFET is the latest development of STMicroelectronics

unique “Single Feature Size™”

strip-based process. The resulting transistor

shows extremely high packing density for low onresistance,

rugged avalance characteristics and

less critical alignment steps therefore a remarkable

manufacturing reproducibility.

APPLICATIONS

DC-DC CONVERTERS

LINEAR POST REGULATION