Features

• 100 avalanche tested

• Low input capacitance and gate charge

• Low gate input resistance

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET developed using the second generation

of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical

structure to the company’s strip layout to yield one of the world’s lowest on-resistance

and gate charge. It is therefore suitable for the most demanding high efficiency

converters.