Features

• AEC-Q101 qualified

• Fast-recovery body diode

• Extremely low gate charge and input capacitance

• Low on-resistance

• 100 avalanche tested

• Extremely high dv/dt ruggedness

• Zener-protected

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery

diode series. It offers very low recovery charge (Qrr) and time (trr) combined

with low RDS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Applications

• Switching applications