DESCRIPTION

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher rug gedness performance as requested by a large variety of single-switch applications.

■ TYPICAL RDS(on) = 1.5Ω

■ EXTREMELY HIGH dv/dt AND CAPABILITY GATE-TO- SOURCE ZENER DIODES

■ 100 AVALANCHE TESTED

■ VERY LOW GATE INPUT RESISTANCE

■ GATE CHARGE MINIMIZED