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STB5NK50Z-1中文资料
STB5NK50Z-1数据手册规格书PDF详情
Features
• 100 avalanche tested
• Gate charge minimized
• Very low intrinsic capacitance
• Zener-protected
Applications
• Switching applications
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs
developed using the SuperMESH™ technology by STMicroelectronics, an
optimization of the well-established PowerMESH™. In addition to a significant
reduction in on-resistance, these devices are designed to ensure a high level of dv/dt
capability for the most demanding applications.
STB5NK50Z-1产品属性
- 类型
描述
- 型号
STB5NK50Z-1
- 功能描述
MOSFET N-CHANNEL 500 V 1.22 OHM - 4.4A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
更新时间：2025-10-4 8:31:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
22+ |
TO-262-3 |
6000 |
原装正品现货 可开增值税发票 |
|||
ST/意法半导体 |
25+ |
TO-262-3 |
4650 |
绝对原装公司现货 |
|||
ST/意法 |
24+ |
TO-262 |
504300 |
免费送样原盒原包现货一手渠道联系 |
|||
ST |
24+ |
TO220MONOC.. |
8866 |
||||
STM |
25+ |
TO-251 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
|||
ST/意法 |
23+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
|||
ST/意法半导体 |
2021+ |
TO-262-3 |
7600 |
原装现货，欢迎询价 |
|||
ST/意法半导体 |
24+ |
TO-262-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
ST/意法半导体 |
21+ |
TO-262-3 |
8860 |
只做原装,质量保证 |
|||
ST/意法 |
23+ |
I2PAK |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
STB5NK50Z-1 资料下载更多...
STB5NK50Z-1 芯片相关型号
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- A10414-R-NCB-E
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- A10414-R-N-ZBK
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- DE2B3KY471KA2BM01
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- DE2B3KY471KA3BM02
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- DE2B3KY471KB3BM02
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- DE2B3KY471KJ2BM01F
- DE2B3KY471KJ3BM02F
- DE2B3KY471KN2AM01
- DE2B3KY471KN2AM01F
- MAX40010TAUT+T
- STB5NK50Z-1_V01
STMICROELECTRONICS相关芯片制造商
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