DESCRIPTION

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOS FETs including revolutionary MDmesh™ products.

■ TYPICAL RDS(on) = 1.22 Ω

■ EXTREMELY HIGH dv/dt CAPABILITY

■ IMPROVED ESD CAPABILITY

■ 100 AVALANCHE RATED

■ GATE CHARGE MINIMIZED

■ VERY LOW INTRINSIC CAPACITANCES

■ VERY GOOD MANUFACTURING REPEATIBILITY