DESCRIPTION

This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™

strip-based process. The resulting transistor shows extremely high packing density for low on

resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark able manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.01 Ω

■ OPTIMIZED FOR HIGH SWITCHING OPERATIONS

■ LOW GATE CHARGE

■ LOGIC LEVEL GATE DRIVE

APPLICATIONS

■ LOW VOLTAGE DC-DC CONVERTERS

■ HIGH CURRENT, HIGH SWITCHING SPEED

■ HIGH EFFICIENCY SWITCHING CIRCUITS