DESCRIPTION

This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.014 Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ LOW GATE CHARGE A 100 oC

■ APPLICATION ORIENTED

CHARACTERIZATION

■ FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

APPLICATIONS

■ HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

■ MOTOR CONTROL, AUDIO AMPLIFIERS

■ DC-DC & DC-AC CONVERTERS IN HIGH

PERFORMANCE VRMs

■ AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)