Description

These FDmesh II Plus™ low Qg Power MOSFETs with intrinsic fast-recovery body diode are produced using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Features

• Extremely low gate charge and input capacitance

• Lower RDS(on) x area vs previous generation

• Low gate input resistance

• 100 avalanche tested

• Zener-protected

• Extremely high dv/dt and avalanche capabilities

Applications

• Switching applications