位置:STB21NM60ND > STB21NM60ND详情
STB21NM60ND中文资料
STB21NM60ND数据手册规格书PDF详情
Description
The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters.
Features
■ The worldwide best RDS(on)*area amongst the fast recovery diode devices
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Extremely high dv/dt and avalanche capabilities
Application
■ Switching applications
STB21NM60ND产品属性
- 类型
描述
- 型号
STB21NM60ND
- 功能描述
MOSFET N-channel 600V, 17A FDMesh II
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
21+ |
D2PAK |
2000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
STMICROELECTRONICS |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
ST/意法 |
24+ |
TO-263 |
400 |
只做原厂渠道 可追溯货源 |
|||
STM |
19+ |
7000 |
TO-263-3 (D2PAK) |
||||
STM |
23+ |
TO-263-3 (D2PAK) |
4000 |
原装现货支持送检 |
|||
ST/意法 |
24+ |
TO-263 |
504140 |
免费送样原盒原包现货一手渠道联系 |
|||
ST |
24+ |
07+ |
1 |
原装现货假一罚十 |
|||
ST |
24+ |
TO-263 |
7500 |
||||
ST |
1651+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
ST |
18+ |
TO-263 |
41200 |
原装正品,现货特价 |
STB21NM60ND 价格
参考价格:¥19.1071
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Datasheet数据表PDF页码索引
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