位置：STB21N65M5 > STB21N65M5详情
STB21N65M5中文资料
STB21N65M5数据手册规格书PDF详情
Description
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
■ Worldwide best RDS(on) * area
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ 100 avalanche tested
Application
Switching applications
STB21N65M5产品属性
- 类型
描述
- 型号
STB21N65M5
- 功能描述
MOSFET POWER MOSFET N-CH 650V
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
STMicroelectronics |
24+ |
NA |
3784 |
进口原装正品优势供应 |
|||
ST/意法半导体 |
22+ |
TO-263-3 |
6002 |
原装正品现货 可开增值税发票 |
|||
ST |
1708+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
TO-263 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
FAIRCHILD/仙童 |
23+ |
TO-252 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
ST |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
STM |
25+ |
TO-263 |
375 |
就找我吧!--邀您体验愉快问购元件! |
|||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ST/意法 |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
STB21N65M5 价格
参考价格：￥11.5090
STB21N65M5 资料下载更多...
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STMICROELECTRONICS相关芯片制造商
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