位置：STB18N55M5 > STB18N55M5详情
STB18N55M5中文资料
STB18N55M5数据手册规格书PDF详情
Description
The devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Features
■ DPAK worldwide best RDS(on)
■ Higher VDSS rating
■ High dv/dt capability
■ Excellent switching performance
■ Easy to drive
■ 100 avalanche tested
Application
Switching applications
STB18N55M5产品属性
- 类型
描述
- 型号
STB18N55M5
- 功能描述
MOSFET N-Ch 550V 0.8 Ohm Mdmesh V 13A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
STMicroelectronics |
24+ |
NA |
3838 |
进口原装正品优势供应 |
|||
ST/意法 |
2021+ |
TO-263 |
9000 |
原装现货,随时欢迎询价 |
|||
ST/意法 |
23+/24+ |
TO-263 |
9865 |
原装MOS管(场效应管). |
|||
ST |
25+23+ |
TO220 |
20429 |
绝对原装正品全新进口深圳现货 |
|||
STM |
25+ |
TO-263 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
|||
ST |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
ST/意法 |
23+ |
TO-263 |
9959 |
||||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ST/意法 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
STB18N55M5 价格
参考价格：￥10.5509
STB18N55M5 资料下载更多...
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