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STB12NM50T4中文资料
STB12NM50T4数据手册规格书PDF详情
Description
The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
General features
■ High dv/dt and avalanche capabilities
■ Low input capacitance and gate charge
■ 100 avalanche tested
■ Low gate input resistance
■ Tight process control and high manufacturing yields
Applications
■ Switching application
STB12NM50T4产品属性
- 类型
描述
- 型号
STB12NM50T4
- 功能描述
MOSFET N-Ch 500 Volt 12 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
21+ |
D2PAK |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
STMICROELECTRONICS |
24+ |
con |
10000 |
查现货到京北通宇商城 |
|||
STMICROELECTRONICS |
24+ |
con |
2500 |
优势库存,原装正品 |
|||
ST/意法 |
25+ |
TO-263 |
32360 |
ST/意法全新特价STB12NM50T4即刻询购立享优惠#长期有货 |
|||
STM |
15+ |
原厂原装 |
6000 |
进口原装现货假一赔十 |
|||
STM |
SOT-263 |
30216 |
提供BOM表配单TEL:0755-83759919QQ:2355705587杜S |
||||
ST/意法 |
24+ |
TO-263 |
4 |
只做原厂渠道 可追溯货源 |
|||
STM |
19+/20+ |
3000 |
TO-263-3 (D2PAK) |
||||
ST |
21+ |
TO-263 |
10000 |
勤思达只做原装 现货库存 支持支持实单 |
|||
STM |
23+ |
TO-263-3 (D2PAK) |
5000 |
原装现货支持送检 |
STB12NM50T4 价格
参考价格:¥10.0180
STB12NM50T4 资料下载更多...
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STMICROELECTRONICS相关芯片制造商
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