Features

■ Excellent thermal stability

■ Common source configuration push-pull

■ POUT = 180W with 10 dB gain @ 1030 MHz

36 V/100 μsec - 10

■ Plastic package

■ In compliance with the 2002/95/EC european

directive

Description

The STAP1011-180 is a common source

N-channel enhancement-mode lateral field-effect

RF power transistor. It is designed for 1030-1090

MHz avionics applications.

STAP1011-180 is mounted in STAP ST advanced

PowerSO-10RF package.

The STAP package was designed to offer high

reliability and power capability. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.