Features

• Enhancement mode normally off transistor

• Very high switching speed

• High power management capability

• Extremely low capacitances

• Kelvin source pad for optimum gate driving

• Zero reverse recovery charge

Applications

• AC-DC converters

• AC-DC PSU for server and telecom

• LED illumination

• Uninterruptable power supplies (UPS)

Description

The SGT65R65AL is a 650 V, 25 A e-mode PowerGaN transistor combined with

a well established packaging technology. The resulting G-HEMT device provides

extremely low conduction losses, high current capability and ultra fast switching

operation to enable high power density and unbeatable efficiency performances.