Features

• Enhancement mode normally off transistor

• Very high switching speed

• High power management capability

• Extremely low capacitances

• Kelvin source pad for optimum gate driving

• Zero reverse recovery charge

Applications

• Adapters for tablets, notebook and AIO

• USB type-C PD adapters and quick chargers

• Wireless chargers

Description

The SGT120R65AL is a 650 V, 15 A e-mode PowerGaN transistor combined with

a well established packaging technology. The resulting G-HEMT device provides

extremely low conduction losses, high current capability and ultra fast switching

operation to enable high power density and unbeatable efficiency performances.