Features

• 1.8 V to 3.3 V nominal supply

• 3.6 V max. operating

• 4.8 V AMR

• Very high speed: propagation delay of 3 ns maximum guaranteed

• Pure CMOS process

• CMOS output

• Ultra low power

• 300 krad TID targeted

• 125 MeV.cm2/mg SEL free

• 62.5 MeV.cm2/mg SET free

Description

The RHFAHC00 device is a very high speed pure CMOS quad 2-input NAND gate,

designed for radiation hardness and characterized in total ionization dose (TID) and

single event effect (SEE).

It is available in die-form and in hermetic ceramic Flat 14-lead screened as per MILPRF-

38535 to comply with the needs of space applications. It can work from -55 °C

to +125 °C ambient temperature.

Applications

• Oscillators in space applications

• FPGA

• Microcontrollers