Features

• High efficiency and linear gain operations

• Integrated ESD protection

• Internally matched pair transistors in push-pull configuration

• Large positive and negative gate-source voltage range for improved class C

operation

• Excellent thermal stability, low HCI drift

• In compliance with the european directive 2002/95/EC

Description

The RF5L08600CB4 is a 650 W, 50 V, high performance, internally matched LDMOS

FET, designed for multiple applications in the frequency range from 0.4 to 1 GHz.

Applications

• Wideband lab amplifier from 0.4 to 1 GHz

• Digital UHF TV 470-860 MHz

• 650 MHz particle accelerator

• 915 MHz RF energy applications