Features

• High efficiency and linear gain operations

• Integrated ESD protection

• Internally matched pair transistors in push-pull configuration

• Large positive and negative gate-source voltage range for improved class C

operation

• Optimized for Doherty applications

• Excellent thermal stability, low HCI drift

• In compliance with the European directive 2002/95/EC

Description

The RF4L10700CB4 is a 700 W, 40 V, high performance, internally matched LDMOS

FET, designed for multiple ISM and RF energy applications up to 1 GHz frequency

range. It can be used in class AB, B or C for both CW and pulse applications in

narrow-band operation. It is qualified up to 40 V operation.

Applications

• ISM

• RF energy