DESCRIPTION

This Power Mosfet is the latest development of STMicroelectronics unique Single Feature Size strip-based process. The resulting transistor shows extremely high packing density for low onresistance,rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

FEATURES SUMMARY

■ TYPICAL RDS(on) = 0.013 Ω

■ EXCEPTIONAL dv/dt CAPABILITY

■ 100 AVALANCHE TESTED

■ LOW GATE CHARGE 100°C

■ HIGH dv/dt CAPABILITY

■ APPLICATION ORIENTED CHARACTERIZATION

APPLICATIONS

■ DC MOTOR CONTROL

■ DC-DC & DC-AC CONVERTERS

■ SYNCHRONOUS RECTIFICATION