Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low onstate resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Features

 Among the lowest RDS(on) on the market

 Excellent figure of merit (FOM )

 Low Crss /Ciss ratio for EMI immunity

 High avalanche ruggedness

Applications

 Switching applications