Description

This device is a high voltage fast-switching NPN power transistor. It is manufactured using high voltage multi epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. The device is designed for use in lighting applications and low cost switch-mode power supplies.

Features

■ High voltage capability

■ Fast switching speed

Applications

■ Lighting

■ Switch mode power supply