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M29W640FT70ZA6E中文资料
M29W640FT70ZA6E数据手册规格书PDF详情
Summary description
The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte (generally groups of four 64 KByte blocks), to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Features summary
■ Supply Voltage
– VCC = 2.7V to 3.6V for Program, Erase, Read
– VPP =12 V for Fast Program (optional)
■ Asynchronous Random/Page Read
– Page Width: 4 Words
– Page Access: 25ns
– Random Access: 60ns, 70ns
■ Programming Time
– 10 µs per Byte/Word typical
– 4 Words/8 Bytes Program
■ 135 memory blocks
– 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location)
– 127 Main Blocks, 64 KBytes each
■ Program/Erase Controller
– Embedded Byte/Word Program algorithms
■ Program/Erase Suspend and Resume
– Read from any Block during Program Suspend
– Read and Program another Block during Erase Suspend
■ Unlock Bypass Program command
– Faster Production/Batch Programming
■ VPP/WP pin for Fast Program and Write Protect
■ Temporary Block Unprotection mode
■ Common Flash Interface
– 64-bit Security Code
■ Extended Memory Block
– Extra block used as security block or to store additional information
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
M29W640FT70ZA6E产品属性
- 类型
描述
- 型号
M29W640FT70ZA6E
- 功能描述
闪存 STD FLASH 64 MEG
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
24+ |
BGA |
23000 |
免费送样原盒原包现货一手渠道联系 |
|||
ST |
25+23+ |
BGA |
16517 |
绝对原装正品全新进口深圳现货 |
|||
ST |
22+ |
BGA |
8500 |
专业分销!只做原装现货价优一手货源 |
|||
Micron Technology Inc. |
21+ |
48-TFBGA,CSPBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
MICRON/美光 |
24+ |
NA |
20000 |
美光专营原装正品 |
|||
Micron Technology Inc. |
24+ |
48-TFBGA(6x8) |
56200 |
一级代理/放心采购 |
|||
NUMONYX |
2447 |
FBGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
MICRON |
25+ |
BGA-48 |
1001 |
就找我吧!--邀您体验愉快问购元件! |
|||
ST |
23+ |
BGA |
6000 |
原装正品假一罚百!可开增票! |
|||
ST/意法 |
23+ |
BGA |
50000 |
全新原装正品现货,支持订货 |
M29W640FT70ZA6E 价格
参考价格:¥8.7925
M29W640FT70ZA6E 资料下载更多...
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