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M29W640FT70N6E中文资料
M29W640FT70N6E数据手册规格书PDF详情
Summary description
The M29W640F is a 64 Mbit (8Mb x8 or 4Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256 KByte (generally groups of four 64 KByte blocks), to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Features summary
■ Supply Voltage
– VCC = 2.7V to 3.6V for Program, Erase, Read
– VPP =12 V for Fast Program (optional)
■ Asynchronous Random/Page Read
– Page Width: 4 Words
– Page Access: 25ns
– Random Access: 60ns, 70ns
■ Programming Time
– 10 µs per Byte/Word typical
– 4 Words/8 Bytes Program
■ 135 memory blocks
– 1 Boot Block and 7 Parameter Blocks, 8 KBytes each (Top or Bottom Location)
– 127 Main Blocks, 64 KBytes each
■ Program/Erase Controller
– Embedded Byte/Word Program algorithms
■ Program/Erase Suspend and Resume
– Read from any Block during Program Suspend
– Read and Program another Block during Erase Suspend
■ Unlock Bypass Program command
– Faster Production/Batch Programming
■ VPP/WP pin for Fast Program and Write Protect
■ Temporary Block Unprotection mode
■ Common Flash Interface
– 64-bit Security Code
■ Extended Memory Block
– Extra block used as security block or to store additional information
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
M29W640FT70N6E产品属性
- 类型
描述
- 型号
M29W640FT70N6E
- 功能描述
闪存 STD FLASH 64 MEG
- RoHS
否
- 制造商
ON Semiconductor
- 数据总线宽度
1 bit
- 存储类型
Flash
- 存储容量
2 MB
- 结构
256 K x 8
- 接口类型
SPI
- 电源电压-最大
3.6 V
- 电源电压-最小
2.3 V
- 最大工作电流
15 mA
- 工作温度
- 40 C to + 85 C
- 安装风格
SMD/SMT
- 封装
Reel
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
TSOP48 |
32360 |
ST/意法全新特价M29W640FT70N6E即刻询购立享优惠#长期有货 |
|||
ST |
23+ |
TSOP |
20000 |
原装进口ICMCUSOCMOS等知名国内外品牌只做原装全 |
|||
MICRON |
2021+ |
TSOP48 |
9450 |
原装现货。 |
|||
ST/意法 |
24+ |
TSOP48 |
10 |
原厂授权代理 价格绝对优势 |
|||
MICRON/美光 |
22+ |
NA |
3000 |
支持任何机构检测 只做原装正品 |
|||
ST |
2021+ |
TSOP |
6800 |
原厂原装,欢迎咨询 |
|||
MICRON美光 |
24+ |
TSOP |
13500 |
免费送样原盒原包现货一手渠道联系 |
|||
ST |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
MICRON/镁光 |
25+ |
原厂封装 |
10280 |
原厂授权一级代理,专注军工、汽车、医疗、工业、新能源、电力! |
|||
ST/意法 |
22+ |
TSOP48 |
10511 |
原装正品现货 可开增值税发票 |
M29W640FT70N6E 价格
参考价格:¥8.7925
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