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M29W512B90NZ1T中文资料

厂家型号

M29W512B90NZ1T

文件大小

139.87Kbytes

页面数量

18

功能描述

512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

M29W512B90NZ1T数据手册规格书PDF详情

SUMMARY DESCRIPTION

The M29W512B is a 512 Kbit (64Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 55ns

■ PROGRAMMING TIME

– 10µs per Byte typical

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: 27h

更新时间:2025-10-17 10:59:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ST/意法
23+
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24+
NA/
3507
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2450+
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6540
只做原装正品现货!或订货假一赔十!
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17+
6200
MICRON/美光
24+
NA
20000
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TSOP-56
1001
就找我吧!--邀您体验愉快问购元件!
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22+
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MICRON/美光
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8000
中赛美只做原装 只有原装
Micron
25+
电联咨询
7800
公司现货,提供拆样技术支持