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M29F040B70N6T中文资料

厂家型号

M29F040B70N6T

文件大小

190.45Kbytes

页面数量

21

功能描述

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

4 Mbit(512Kb x8, Uniform Block) Single Supply Flash Memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

M29F040B70N6T数据手册规格书PDF详情

SUMMARY DESCRIPTION

The M29F040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed us ing a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F040B is fully backward compatible with the M29F040.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.

They allow simple connection to most microprocessors, often without additional logic.

The memory is offered in TSOP32 (8 x 20mm), PLCC32 and PDIP32 packages and it is supplied with all the bits erased (set to ‘1’).

■ SINGLE 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 8 µs per Byte typical

■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h

M29F040B70N6T产品属性

  • 类型

    描述

  • 型号

    M29F040B70N6T

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    4 Mbit(512Kb x8, Uniform Block) Single Supply Flash Memory

更新时间:2025-10-8 15:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
ST
24+
DIP
200
ST/意法
02+
DIP
21
原装/现货
ST
23+
DIP
8678
原厂原装
ST/意法
23+
DIP
89630
当天发货全新原装现货
ST/意法
25+
DIP
880000
明嘉莱只做原装正品现货
ST/意法
02+
DIP
21
原装现货
ST/意法
2450+
DIP
8850
只做原装正品假一赔十为客户做到零风险!!
ST
25+
PLCC
2560
绝对原装!现货热卖!
ST
25+23+
DIP
37093
绝对原装正品全新进口深圳现货
AMD
23+24
TSSOP
29650
原装正品优势渠道价格合理.可开13%增值税发票