位置:M29F040B55N3T > M29F040B55N3T详情

M29F040B55N3T中文资料

厂家型号

M29F040B55N3T

文件大小

190.45Kbytes

页面数量

21

功能描述

4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory

4 Mbit(512Kb x8, Uniform Block) Single Supply Flash Memory

数据手册

下载地址一下载地址二到原厂下载

生产厂商

STMICROELECTRONICS

M29F040B55N3T数据手册规格书PDF详情

SUMMARY DESCRIPTION

The M29F040B is a 4 Mbit (512Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed us ing a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM. The M29F040B is fully backward compatible with the M29F040.

The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Chip Enable, Output Enable and Write Enable signals control the bus operation of the memory.

They allow simple connection to most microprocessors, often without additional logic.

The memory is offered in TSOP32 (8 x 20mm), PLCC32 and PDIP32 packages and it is supplied with all the bits erased (set to ‘1’).

■ SINGLE 5V ± 10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

■ ACCESS TIME: 45ns

■ PROGRAMMING TIME

– 8 µs per Byte typical

■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS

■ PROGRAM/ERASE CONTROLLER

– Embedded Byte Program algorithm

– Embedded Multi-Block/Chip Erase algorithm

– Status Register Polling and Toggle Bits

■ ERASE SUSPEND and RESUME MODES

– Read and Program another Block during Erase Suspend

■ UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1 ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: E2h

M29F040B55N3T产品属性

  • 类型

    描述

  • 型号

    M29F040B55N3T

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    4 Mbit(512Kb x8, Uniform Block) Single Supply Flash Memory

更新时间:2025-10-7 15:30:00
供应商 型号 品牌 批号 封装 库存 备注 价格
NUM
24+
3432
ST
25+
PLCC
2560
绝对原装!现货热卖!
STM
05+
原厂原装
4287
只做全新原装真实现货供应
ST
23+
PLCC32
8560
受权代理!全新原装现货特价热卖!
ST
1824+
PLCC
7408
原装现货专业代理,可以代拷程序
ST
24+
PLCC32
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
Micron Technology Inc.
21+
32-LCC(J 形引线)
320
100%进口原装!长期供应!绝对优势价格(诚信经营
Micron Technology Inc.
24+
32-PLCC(11.35x13.89)
56200
一级代理/放心采购
MICRON
25+
PLCC-32
1001
就找我吧!--邀您体验愉快问购元件!
ST
21+
PLCC
3952
只做原装正品,不止网上数量,欢迎电话微信查询!