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M29F010B45N1E中文资料
M29F010B45N1E数据手册规格书PDF详情
SUMMARY DESCRIPTION
The M29F010B is a 1 Mbit (128Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
■ SINGLE 5V±10 SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS
■ ACCESS TIME: 45 ns
■ PROGRAMMING TIME
– 8 µs per Byte typical
■ 8 UNIFORM 16 KBytes MEMORY BLOCKS
■ PROGRAM/ERASE CONTROLLER
– Embedded Byte Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ LOW POWER CONSUMPTION
– Standby and Automatic Standby
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: 20h
■ ECOPACK® PACKAGES AVAILABLE
M29F010B45N1E产品属性
- 类型
描述
- 型号
M29F010B45N1E
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
1 Mbit 128Kb x8, Uniform Block Single Supply Flash Memory
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
NUM |
24+ |
1560 |
|||||
ST |
23+24 |
PLCC-32 |
9680 |
原盒原标.进口原装.支持实单 .价格优势 |
|||
ST |
25+ |
标准封装 |
18000 |
原厂直接发货进口原装 |
|||
ST |
23+ |
DIP |
16900 |
正规渠道,只有原装! |
|||
ST |
25+ |
DIP |
16900 |
原装,请咨询 |
|||
ST |
2511 |
DIP |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST |
24+ |
12 |
原装现货,可开13%税票 |
||||
ST |
24+ |
PLCC32 |
5000 |
全现原装公司现货 |
|||
ST |
25+ |
PLCC32 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
STM |
23+ |
NA |
598 |
专做原装正品,假一罚百! |
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